This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers techniques for determination of the length of the flatted portion of a wafer periphery.
1.2 This test method is intended primarily for use on electronic materials in the form of nominally circular edge-contoured wafers with flat lengths up to 65 mm. The precision of this test method has been established directly only for silicon wafers, but it is not expected to be material dependent.
1.3 This test method is suitable for referee measurement purposes and may be used for routine acceptance measurements when specified limits require test precision greater than can be obtained with hand held scale and unaided eye.
1.4 This test method is independent of surface finish.
1.5 For application to wafers of diameter 3 in. or smaller, the values stated in inch-pound units are to be regarded as the standard; the values stated in acceptable metric units are for information only. For application to wafers of diameter larger than 3 in., the values stated in acceptable metric units are to be regarded as the standard whether or not they appear in parentheses; the values stated in inch-pound units are for information only.
1.6 This standard does not purport to address the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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