IEC 60747-7-4 Ed. 1.0 b:1991

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification

International Electrotechnical Commission, 08/15/1991

Publisher: IEC

File Format: PDF

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Published:15/08/1991

Pages:33

File Size:1 file , 1.3 MB

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Corrigendum 1 - Wind energy generation systems - Part 6: Tower and foundation design requirements

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Test procedure for the determination of the temperature index of enamelled and tape wrapped winding wires

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Industrial communication networks - Fieldbus specifications - Part 3-12: Data-link layer service definition - Type 12 elements

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