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International Electrotechnical Commission, 07/01/2022
Publisher: IEC
File Format: PDF
$95.00$190.00
Published:01/07/2022
Pages:30
File Size:1 file , 7.9 MB
Note:This product is unavailable in Ukraine, Russia, Belarus
This part of IEC 63068 provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
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