Your shopping cart is empty!
PDF Preview
International Electrotechnical Commission, 07/01/2022
Publisher: IEC
File Format: PDF
$95.00$190.00
Published:01/07/2022
Pages:30
File Size:1 file , 7.9 MB
Note:This product is unavailable in Ukraine, Russia, Belarus
This part of IEC 63068 provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
Electrical insulating materials - Thermal endurance properties - Part 1: Ageing procedures and evaluation of test results
$139.00 $278.00
Particular safety requirements for equipment to be connected to information and communication technology networks
$95.00 $190.00
Fibre optic interconnecting devices and passive components - Fibre optic isolators - Part 1: Generic specification
Electrical insulating materials - Thermal endurance properties - Part 8: Instructions for calculating thermal endurance characteristics using simplified procedures
$72.00 $145.00
