Your shopping cart is empty!
International Electrotechnical Commission, 04/07/2021
Publisher: IEC
File Format: PDF
$95.00$190.00
Published:07/04/2021
Pages:21
File Size:1 file , 2.6 MB
Note:This product is unavailable in Ukraine, Russia, Belarus
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
Low-voltage electrical installations - Part 7-708: Requirements for special installations or locations - Caravan parks, camping parks and similar locations
$47.00 $95.00
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
$25.00 $51.00
High voltage direct current (HVDC) power transmission - Cables with extruded insulation and their accessories for rated voltages up to 320 kV for land applications - Test methods and requirements
$208.00 $417.00
High-voltage switchgear and controlgear - Part 4: Handling procedures for sulphur hexafluoride (SF6) and its mixtures
$196.00 $392.00
