• Your shopping cart is empty!

PDF Preview

IEC 63275-1 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

International Electrotechnical Commission, 04/01/2022

Publisher: IEC

File Format: PDF

$47.00$95.00


Published:01/04/2022

Pages:30

File Size:1 file , 1.1 MB

Note:This product is unavailable in Ukraine, Russia, Belarus

This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

More IEC standard pdf

IEC 61249-3-4 Ed. 1.0 b:1999

IEC 61249-3-4 Ed. 1.0 b:1999

Materials for printed boards and other interconnecting structures - Part 3-4: Sectional specification set for unreinforced base materials, clad and unclad (intended for flexible printed boards) - Adhesive coated flexible polyimide film

$47.00 $95.00

IEC 61249-3-3 Ed. 1.0 b:1999

IEC 61249-3-3 Ed. 1.0 b:1999

Materials for printed boards and other interconnecting structures - Part 3-3: Sectional specification set for unreinforced base materials, clad and unclad (intended for flexible printed boards) - Adhesive coated flexible polyester film

$47.00 $95.00

IEC 61629-2 Ed. 1.0 b:1996

IEC 61629-2 Ed. 1.0 b:1996

Aramid pressboard for electrical purposes - Part 2: Methods of test

$6.00 $13.00

IEC 60898-1 Amd.2 Ed. 1.0 b:2003

IEC 60898-1 Amd.2 Ed. 1.0 b:2003

Amendment 2 - Electrical accessories - Circuit-breakers for overcurrent protection for household and similar installations - Part 1: Circuit-breakers for a.c. operation

$36.00 $73.00