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International Electrotechnical Commission, 04/01/2022
Publisher: IEC
File Format: PDF
$47.00$95.00
Published:01/04/2022
Pages:30
File Size:1 file , 1.1 MB
Note:This product is unavailable in Ukraine, Russia, Belarus
This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
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