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International Electrotechnical Commission, 05/01/2022
Publisher: IEC
File Format: PDF
$25.00$51.00
Published:01/05/2022
Pages:24
File Size:1 file , 900 KB
Note:This product is unavailable in Ukraine, Russia, Belarus
This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
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