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International Electrotechnical Commission, 05/01/2022
Publisher: IEC
File Format: PDF
$25.00$51.00
Published:01/05/2022
Pages:24
File Size:1 file , 900 KB
Note:This product is unavailable in Ukraine, Russia, Belarus
This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Guidance for installation procedures and tolerances of hydroelectric machines - Part 2: Vertical generators
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Specifications for particular types of winding wires - Part 70-1: Polyester glass-fibre wound unvarnished and fused, bare or enamelled round copper wire, temperature index 155
