IEC 63275-2 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

International Electrotechnical Commission, 05/01/2022

Publisher: IEC

File Format: PDF

$25.00$51.00

Description

Published:01/05/2022

Pages:24

File Size:1 file , 900 KB

Note:This product is unavailable in Ukraine, Russia, Belarus

This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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