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International Electrotechnical Commission, 04/01/2022
Publisher: IEC
File Format: PDF
$47.00$95.00
Published:01/04/2022
Pages:30
File Size:1 file , 970 KB
Note:This product is unavailable in Ukraine, Russia, Belarus
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
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