JEDEC JEP183A

Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs

JEDEC Solid State Technology Association, 01/01/2023

Publisher: JEDEC

File Format: PDF

$104.00$209.99


Published:01/01/2023

Pages:14

File Size:1 file , 550 KB

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SiC MOSFETs have threshold voltage hysteresis, which must be carefully considered when evaluating the VT shift caused by stress tests such as bias-temperature instabilities (BTI) [1]. This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis.
The test methods can be applied to the following:
• N-channel SiC MOSFET (vertical structure)
• Wafer and package levels

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