JEDEC JEP194

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs

JEDEC Solid State Technology Association, 02/01/2023

Publisher: JEDEC

File Format: PDF

$121.00$242.39


Published:01/02/2023

Pages:30

File Size:1 file , 670 KB

Note:This product is unavailable in Russia, Ukraine, Belarus

This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric.

More JEDEC standard pdf

JEDEC JESD22-A115C

JEDEC JESD22-A115C

ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY TESTING MACHINE MODEL (MM)

$27.00 $54.00

JEDEC JEP 122F

JEDEC JEP 122F

FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES

$70.00 $141.00

JEDEC JEP709

JEDEC JEP709

A Guideline for Defining "Low-Halogen" Solid State Devices (Removal of BFR/CFR/PVC)

$27.00 $54.00

JEDEC JESD22-A111A

JEDEC JESD22-A111A

EVALUATION PROCEDURE FOR DETERMINING CAPABILITY TO BOTTOM SIDE BOARD ATTACH BY FULL BODY SOLDER IMMERSION OF SMALL SURFACE MOUNT SOLID STATE DEVICES

$29.00 $59.00