JEDEC JEP194

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs

JEDEC Solid State Technology Association, 02/01/2023

Publisher: JEDEC

File Format: PDF

$121.00$242.39


Published:01/02/2023

Pages:30

File Size:1 file , 670 KB

Note:This product is unavailable in Russia, Ukraine, Belarus

This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric.

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