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JEDEC Solid State Technology Association, 02/01/2023
Publisher: JEDEC
File Format: PDF
$121.00$242.39
Published:01/02/2023
Pages:30
File Size:1 file , 670 KB
Note:This product is unavailable in Russia, Ukraine, Belarus
This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric.
TEMPERATURE CYCLING
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STEADY-STATE TEMPERATURE HUMIDITY BIAS LIFE TEST
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Addendum No. 1 to JESD209A - LOW POWER DOUBLE DATA RATE (LPDDR) SDRAM, 1.2 V I/O
FBDIMM: ADVANCED MEMORY BUFFER (AMB)
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