JEDEC JESD24-12

THERMAL IMPEDANCE MEASUREMENT FOR INSULATED GATE BIPOLAR TRANSISTORS - (Delta VCE(on) Method)

JEDEC Solid State Technology Association, 06/01/2004

Publisher: JEDEC

File Format: PDF

$28.00$56.00

Description

Published:01/06/2004

File Size:1 file , 470 KB

Note:This product is unavailable in Russia, Ukraine, Belarus

The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.

More JEDEC standard pdf

JEDEC JESD 24-11 (R2002)

ADDENDUM No. 11 to JESD24 - POWER MOSFET EQUIVALENT SERIES GATE RESISTANCE TEST METHOD

$24.00 $48.00

JEDEC JEP128

GUIDE FOR STANDARD PROBE PAD SIZES AND LAYOUTS FOR WAFER LEVEL ELECTRICAL TESTING

$25.00 $51.00

JEDEC JESD8-8

ADDENDUM No. 8 to JESD8 - STUB SERIES TERMINATED LOGIC FOR 3.3 VOLTS (SSTL_3) A 3.3 V VOLTAGE BASED INTERFACE STANDARD FOR DIGITAL INTEGRATED CIRCUITS

$29.00 $59.00

JEDEC JESD51-3

LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD FOR LEADED SURFACE MOUNT PACKAGES

$26.00 $53.00