• JEDEC JESD90

JEDEC JESD90

A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIES

JEDEC Solid State Technology Association, 11/01/2004

Publisher: JEDEC

File Format: PDF

$30.00$60.00


Published:01/11/2004

Pages:19

File Size:1 file , 94 KB

Note:This product is unavailable in Russia, Ukraine, Belarus

This document describes an accelerated stress and test methodology for measuring device parameter changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.

More JEDEC standard pdf

JEDEC JP 002

JEDEC JP 002

CURRENT TIN WHISKERS THEORY AND MITIGATION PRACTICES GUIDELINE

$36.00 $72.00

JEDEC JESD203

JEDEC JESD203

STANDARD TEST LOADS FOR DUAL-SUPPLY LEVEL TRANSLATION DEVICES

$25.00 $51.00

JEDEC EIA 557B

JEDEC EIA 557B

STATISTICAL PROCESS CONTROL SYSTEMS

$37.00 $74.00

JEDEC JESD96A

JEDEC JESD96A

RADIO FRONT END - BASEBAND (RF-BB) INTERFACE

$53.00 $106.00